SIA421DJ-T1-GE3【PDF 2/9 页】MOSFET P-CH 30V 12A SC70-6

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SiA421DJ

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

? V DS /T J

? V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 30

- 31

4

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 1.5

-3

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 20 V

V DS = - 30 V, V GS = 0 V

V DS = - 30 V, V GS = 0 V, T J = 55 °C

V DS ?? - 5 V, V GS = - 10 V

- 20

± 100

-1

- 10

nA

μA

A

Drain-Source On-State Resistance a

Forward Transconductance a

R DS(on)

g fs

V GS = - 10 V, I D = - 5.3 A

V GS = - 4.5 V, I D = - 4.2 A

V DS = - 15 V, I D = - 5.3 A

0.029

0.046

15

0.035

0.056

?

S

Dynamic

b

Input Capacitance

C iss

950

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 15 V, V GS = 0 V, f = 1 MHz

150

120

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 15 V, V GS = - 10 V, I D = - 7.9 A

V DS = - 15 V, V GS = - 4.5 V, I D = - 7.9 A

19

10

3

29

15

nC

Gate-Drain Charge

Q gd

4.5

Gate Resistance

R g

f = 1 MHz

1.2

6.5

13

?

Turn-On Delay Time

t d(on)

40

60

Rise Time

Turn-Off Delay Time

t r

t d(off)

V DD = - 15 V, R L = 2.4 ?

I D ? - 6.3 A, V GEN = - 4.5 V, R g = 1 ?

110

25

165

40

Fall Time

Turn-On Delay Time

t f

t d(on)

12

10

20

15

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(off)

t f

V DD = - 15 V, R L = 2.4 ?

I D ? - 6.3 A, V GEN = - 10 V, R g = 1 ?

12

30

10

20

45

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

I S

I SM

T C = 25 °C

- 12

35

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 6.3 A, V GS = 0 V

I F = - 6.3 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.8

20

15

12

8

- 1.2

30

30

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 73975

S12-1959-Rev. E, 13-Aug-12

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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